Toshiba Corp. will build a new 300-millimetre wafer fabrication plant for power semiconductors that will more than double its production capacity by March 2025, the company announced Friday.
Construction of the new facility in Ishikawa Prefecture in western Japan will take place in two phases, the company said. When the first phase is fully operational, Toshiba’s power semiconductor capacity will be 2.5 times larger than in fiscal 2021.
Toshiba will invest about 100bil yen (RM3.63bil) to build the facility, the Nikkei newspaper reported earlier.