SK Hynix says has developed its most advanced 238-layer storage chip

FILE PHOTO: Employees walk past the logo of SK Hynix at its headquarters in Seongnam, South Korea, April 25, 2016. REUTERS/Kim Hong-Ji

SEOUL (Reuters) - South Korea's SK Hynix Inc has developed its most advanced NAND flash chip made up of 238 layers of memory cells for use in PC storage devices and later smartphones and servers, the world's second-largest memory chip maker said on Wednesday.

SK Hynix described it as the "industry's highest" NAND flash chip and it follows U.S. rival Micron Technology Inc saying last week it had begun shipping a 232-layer NAND chip.